Discrete Semiconductor Products

EMH6T2R

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TRANS 2NPN PREBIAS 0.15W EMT6

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Discrete Semiconductor Products

Active

TRANS 2NPN PREBIAS 0.15W EMT6

Technical Specifications

Parameters and characteristics for this part

Specification	EMH6T2R

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	68
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	EMT6
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Resistor - Emitter Base (R2)	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Resistor - Base (R1)	Transistor Type
Rohm Semiconductor EMH6T2R	68	47 kOhms	250 MHz	50 V	SOT-563 SOT-666	100 mA	500 nA	EMT6	300 mV	Surface Mount	47 kOhms	2 NPN - Pre-Biased (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Technical documentation and resources

No documents available