Discrete Semiconductor Products

EMP11FHT2R

NRND

DIODE ARRAY GP 80V 100MA EMD6

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Discrete Semiconductor Products

NRND

DIODE ARRAY GP 80V 100MA EMD6

Technical Specifications

Parameters and characteristics for this part

Specification	EMP11FHT2R

Current - Average Rectified (Io) (per Diode)	100 mA
Current - Reverse Leakage @ Vr	100 nA
Diode Configuration	2 Pair Common Anode
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	SOT-563, SOT-666
Qualification	AEC-Q101
Reverse Recovery Time (trr)	4 ns
Speed	200 mA
Speed	Any Speed
Supplier Device Package	EMD6
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.2 V

High-speed switching, 80V, 100mA, 2 Pair Anode Common Switching Diode

Part	Operating Temperature - Junction [Max]	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Supplier Device Package	Diode Configuration	Mounting Type	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Speed	Technology	Current - Reverse Leakage @ Vr	Grade	Qualification
Rohm Semiconductor EMP11T2R	150 °C	4 ns	1.2 V	SOT-563 SOT-666	EMD6	2 Pair Common Anode	Surface Mount	100 mA	80 V	200 mA	Any Speed	Standard	100 nA
Rohm Semiconductor EMP11FHT2R	150 °C	4 ns	1.2 V	SOT-563 SOT-666	EMD6	2 Pair Common Anode	Surface Mount	100 mA	80 V	200 mA	Any Speed	Standard	100 nA	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

ROHM's switching diodes, including diode arrays, are available in high-reliability packages and stable supply for various applications.

Technical documentation and resources