Discrete Semiconductor Products

2N2222

Obsolete

TRANS NPN 30V 0.8A TO18

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Discrete Semiconductor Products

Obsolete

TRANS NPN 30V 0.8A TO18

Technical Specifications

Parameters and characteristics for this part

Specification	2N2222

Current - Collector (Ic) (Max) [Max]	800 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Mounting Type	Through Hole
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	500 mW
Supplier Device Package	TO-18
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Power - Max [Max]	Transistor Type	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]
ON Semiconductor 2N2222A	500 mW	NPN	Through Hole	40 V	TO-18-3 Metal Can TO-206AA	100	TO-18	1 V	800 mA
ON Semiconductor 2N2222	500 mW	NPN	Through Hole	30 V	TO-18-3 Metal Can TO-206AA	100	TO-18	1.6 V	800 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 30 V 800 mA 500 mW Through Hole TO-18

Technical documentation and resources