Discrete Semiconductor Products

M8550-D-AP

Obsolete

TRANS PNP 25V 0.1A TO-92

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PNP 25V 0.1A TO-92

Technical Specifications

Parameters and characteristics for this part

Specification	M8550-D-AP

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	150 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max)	25 V

Part	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Package / Case	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type
Micro Commercial Components M8550-C-AP	25 V	120	625 mW	TO-226-3 TO-92-3	TO-92	150 MHz	PNP	800 mA	-55 °C	150 °C	100 nA	500 mV	Through Hole
Micro Commercial Components M8550-D-AP	25 V	160	625 mW	TO-226-3 TO-92-3	TO-92	150 MHz	PNP	100 mA	-55 °C	150 °C	100 nA	500 mV	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 25 V 100 mA 150MHz 625 mW Through Hole TO-92

Technical documentation and resources

No documents available