Discrete Semiconductor Products

SI7110DN-T1-E3

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MOSFET N-CH 20V 13.5A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 20V 13.5A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7110DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	13.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	5.3 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SI7110DN-T1-E3	13.5 A	PowerPAK® 1212-8	4.5 V 10 V	1.5 W	N-Channel	20 V	20 V	2.5 V	PowerPAK® 1212-8	5.3 mOhm	Surface Mount	-55 °C	150 °C	MOSFET (Metal Oxide)	21 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 13.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8

Technical documentation and resources