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TO-251AA
Discrete Semiconductor Products

IRFU020

Obsolete

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DocumentsDatasheet
TO-251AA
Discrete Semiconductor Products

IRFU020

Obsolete

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIRFU020
Current - Continuous Drain (Id) @ 25°C14 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]25 nC
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)42 W, 2.5 W
Rds On (Max) @ Id, Vgs100 mOhm
Supplier Device PackageTO-251AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IRFU Series

N-Channel 60 V 14A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA

Documents

Technical documentation and resources