Discrete Semiconductor Products

1N5404-G

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DIODE GEN PURP 400V 3A DO27

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Discrete Semiconductor Products

Active

DIODE GEN PURP 400V 3A DO27

Technical Specifications

Parameters and characteristics for this part

Specification	1N5404-G

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-65 °C
Package / Case	DO-201AD, Axial
Package Name	DO-27 (DO-201AD)
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	400 V
Voltage - Forward (Vf) (Max)	950 mV, 950 mV

Part	Technology	Current - Average Rectified (Io)	Package Name	Mounting Type	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Voltage - Forward (Vf) (Max)	Package / Case	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time
Comchip Technology 1N5404-G	Standard	3 A	DO-27 (DO-201AD)	Through Hole	5 µA	400 V	950 mV 950 mV	Axial DO-201AD	125 °C	-65 °C	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Cut Tape (CT)	1	$ 0.29	1m+
		10	$ 0.22
		100	$ 0.13
		500	$ 0.12
	N/A	234108	$ 0.40	1m+
	Tape & Box (TB)	1200	$ 0.09	1m+

3D models and CAD resources for this part

General part information

Diode 400 V 3A Through Hole DO-27 (DO-201AD)

Technical documentation and resources

No documents available