Discrete Semiconductor Products

PBLS1502V,115

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS1502V,115

Current - Collector (Ic) (Max)	500 mA, 100 mA
Current - Collector Cutoff (Max)	100 nA
Current - Collector Cutoff (Max)	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	30, 150
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	300 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	4700 Ohms
Supplier Device Package	SOT-666
Transistor Type	1 NPN Pre-Biased, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV, 150 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V
Voltage - Collector Emitter Breakdown (Max) [Min]	15 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Min]	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max)	Current - Collector Cutoff (Max)	Vce Saturation (Max) @ Ib, Ic	Power - Max [Max]	Package / Case	Resistor - Base (R1)	Resistor - Emitter Base (R2)	Frequency - Transition	Mounting Type	Current - Collector (Ic) (Max)	Transistor Type
Freescale Semiconductor - NXP PBLS1502V,115	50 V	15 V	SOT-666	30 150	100 nA	1 µA	150 mV 250 mV	300 mW	SOT-563 SOT-666	4.7 kOhms	4700 Ohms	280 MHz	Surface Mount	100 mA 500 mA	1 NPN Pre-Biased 1 PNP

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount SOT-666

Technical documentation and resources