Discrete Semiconductor Products

PBLS1502V,115

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS NPN PREBIAS/PNP SOT666

Technical Specifications

Parameters and characteristics for this part

Specification	PBLS1502V,115

Current - Collector (Ic) (Alternate)	0.5 mA
Current - Collector (Ic) (Max)	0.1 mA
Current - Collector Cutoff (Max)	100 nA, 1 µA
DC Current Gain (hFE) (Min)	30, 150
Frequency - Transition	280 MHz
Mounting Type	Surface Mount
NPN Count	1
Package / Case	SOT-563, SOT-666
Package Name	SOT-666
PNP Count	1
Power - Max	300 mW
Resistor - Base (R1) Resistance	4.7 kOhm
Resistor - Emitter Base (R2)	4.7 kOhms
Transistor Configuration	Pre-Biased
Transistor Type	NPN, PNP
Vce Saturation (Max)	150 mV, 250 mV
Voltage - Collector Emitter Breakdown (Max) (Value 1)	50 V
Voltage - Collector Emitter Breakdown (Max) (Value 2)	15 V

Part	Current - Collector Cutoff (Max)	Package / Case	Package Name	Voltage - Collector Emitter Breakdown (Max) (Value 1)	Voltage - Collector Emitter Breakdown (Max) (Value 2)	Current - Collector (Ic) (Max)	Current - Collector (Ic) (Alternate)	NPN Count	Transistor Type	Transistor Configuration	PNP Count	Resistor - Emitter Base (R2)	Frequency - Transition	Mounting Type	Resistor - Base (R1) Resistance	Power - Max	DC Current Gain (hFE) (Min)	Vce Saturation (Max)
NXP USA Inc. PBLS1502V,115	1 µA 100 nA	SOT-563 SOT-666	SOT-666	50 V	15 V	0.1 mA	0.5 mA	1	NPN PNP	Pre-Biased	1	4.7 kOhms	280 MHz	Surface Mount	4.7 kOhm	300 mW	30 150	150 mV 250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

3D models and CAD resources for this part

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 PNP 50V, 15V 100mA, 500mA 280MHz 300mW Surface Mount SOT-666

Technical documentation and resources