Discrete Semiconductor Products

MCAC85N06KY-TP

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MOSFET N-CH 60 85A DFN5060

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Discrete Semiconductor Products

Active

MOSFET N-CH 60 85A DFN5060

Technical Specifications

Parameters and characteristics for this part

Specification	MCAC85N06KY-TP

Current - Continuous Drain (Id) @ 25°C	85 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	70.78 nC
Input Capacitance (Ciss) (Max) @ Vds	4650 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max) [Max]	110 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	DFN5060
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	FET Type	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Micro Commercial Components MCAC85N06Y-TP	3350 pF	8-PowerTDFN	4.5 V 10 V	66.1 nC	2.5 V	3 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	N-Channel	85 A	DFN5060	60 V	20 V	105 W
Micro Commercial Components MCAC85N06KY-TP	4650 pF	8-PowerTDFN	4.5 V 10 V		2.5 V		-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	N-Channel	85 A	DFN5060	60 V	20 V	110 W	70.78 nC	3.7 mOhm

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General part information

N-Channel 60 V 85A 110W Surface Mount DFN5060

Technical documentation and resources