Discrete Semiconductor Products

SQ4410EY-T1_GE3

Active

MOSFET N-CH 30V 15A 8SO

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 30V 15A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SQ4410EY-T1_GE3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	2385 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Grade	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Qualification	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]
Vishay General Semiconductor - Diodes Division SQ4410EY-T1_BE3	4.5 V 10 V	8-SOIC	MOSFET (Metal Oxide)	2385 pF	Automotive	20 V	-55 °C	175 ░C	N-Channel	12 mOhm	15 A	30 V	53 nC	Surface Mount	AEC-Q101	2.5 V	5 W	8-SOIC	3.9 mm	0.154 in
Vishay General Semiconductor - Diodes Division SQ4410EY-T1_GE3	4.5 V 10 V	8-SOIC	MOSFET (Metal Oxide)	2385 pF		20 V	-55 °C	175 ░C	N-Channel	12 mOhm	15 A	30 V	53 nC	Surface Mount		2.5 V	5 W	8-SOIC	3.9 mm	0.154 in

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 15A (Tc) 5W (Tc) Surface Mount 8-SOIC

Technical documentation and resources