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FAIFSCHGTP7N60B3D
Discrete Semiconductor Products

BYV34-600,127

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NXP USA Inc.

DIODE ARRAY GP 600V 20A TO220AB

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FAIFSCHGTP7N60B3D
Discrete Semiconductor Products

BYV34-600,127

Active
NXP USA Inc.

DIODE ARRAY GP 600V 20A TO220AB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV34-600,127
Current - Average Rectified (Io) (per Diode)20 A
Current - Reverse Leakage50 µA
Diode ConfigurationCommon Cathode
Diode Pair Count1 pair
Mounting TypeThrough Hole
Operating Temperature - Junction (Max)150 °C
Package / CaseTO-220-3
Package NameTO-220AB
Reverse Recovery Time (trr)60 ns
Speed - Fast Recovery (Maximum)500 ns
Speed - Fast Recovery (Minimum)200 mA
TechnologyStandard
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max)1.48 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 394$ 0.761m+
N/A 0$ 0.661m+
10486$ 1.12
Tube 6000$ 0.681m+

CAD

3D models and CAD resources for this part

Description

General part information

BYV34 Series

Diode Array 1 Pair Common Cathode 600 V 20A Through Hole TO-220-3

Documents

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