Discrete Semiconductor Products

VS-85HFL100S05

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DIODE GEN PURP 1KV 85A DO203AB

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Discrete Semiconductor Products

Active

DIODE GEN PURP 1KV 85A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-85HFL100S05

Current - Average Rectified (Io)	85 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	DO-203AB, DO-5, Stud
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-5
Supplier Device Package	DO-203AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V

Part	Current - Average Rectified (Io)	Supplier Device Package	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Mounting Type	Reverse Recovery Time (trr)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-85HFL100S05	85 A	DO-5	DO-203AB	1000 V	200 mA 500 ns	Standard	Chassis Stud Mount	500 ns	DO-203AB DO-5 Stud	125 °C	-40 °C	100 µA

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General part information

Diode 1000 V 85A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources