Discrete Semiconductor Products
YQ12RSM10SDTL1
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 12A, TO-277GE, HIGHLY EFFICIENT SBD
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Discrete Semiconductor Products
YQ12RSM10SDTL1
ActiveRohm Semiconductor
TRENCH MOS STRUCTURE, 100V, 12A, TO-277GE, HIGHLY EFFICIENT SBD
Technical Specifications
Parameters and characteristics for this part
| Specification | YQ12RSM10SDTL1 |
|---|---|
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 90 µA |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | 175 °C |
| Package / Case | TO-277, 3-PowerDFN |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | TO-277A |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 670 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
YQ12RSM10SD Series
The YQ12RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.
Documents
Technical documentation and resources