IMBG65R039M1HXTMA1
ActiveTHE IMBG65R039M1H COOLSIC™ MOSFET 650V IS A COMPACT SMD 7 PIN SIC MOSFET BUILT ON A STATE-OF-THE-ART INFINEON SIC TRENCH TECHNOLOGY.
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IMBG65R039M1HXTMA1
ActiveTHE IMBG65R039M1H COOLSIC™ MOSFET 650V IS A COMPACT SMD 7 PIN SIC MOSFET BUILT ON A STATE-OF-THE-ART INFINEON SIC TRENCH TECHNOLOGY.
Technical Specifications
Parameters and characteristics for this part
| Specification | IMBG65R039M1HXTMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 54 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 41 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1393 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) | 211 W |
| Rds On (Max) @ Id, Vgs [Max] | 51 mOhm |
| Supplier Device Package | PG-TO263-7-12 |
| Vgs (Max) [Max] | 23 V |
| Vgs (Max) [Min] | -5 V |
| Vgs(th) (Max) @ Id | 5.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IMBG65 Series
CoolSiC™ MOSFET technologyleverages the strong physical characteristics of silicon carbide, adding unique features that increase the device performance, robustness, and ease of use. The IMBG65R039M1HCoolSiC™ MOSFET 650Vis a compact SMD 7 pin SiC MOSFET built on a state-of-the-art Infineon SiC trench technology and used in high power applications. It is optimized to enable max system performance, compactness and reliability.
Documents
Technical documentation and resources