Discrete Semiconductor Products

SB350-E3/54

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DIODE SCHOTTKY 50V 3A DO201AD

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Discrete Semiconductor Products

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DIODE SCHOTTKY 50V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	SB350-E3/54

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	680 mV

Part	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Supplier Device Package	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division SB350-E3/73	3 A	DO-201AD Axial	50 V	680 mV	Schottky	200 mA 500 ns	DO-201AD	Through Hole	500 µA	150 °C	-65 C
Vishay General Semiconductor - Diodes Division SB350-E3/54	3 A	DO-201AD Axial	50 V	680 mV	Schottky	200 mA 500 ns	DO-201AD	Through Hole	500 µA	150 °C	-65 C

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General part information

Diode 50 V 3A Through Hole DO-201AD

Technical documentation and resources