Discrete Semiconductor Products

BSR14,215

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TRANS NPN 40V 0.8A TO236AB

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Discrete Semiconductor Products

Active

TRANS NPN 40V 0.8A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	BSR14,215

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	300 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	250 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Transistor Type	Supplier Device Package	Grade	Power - Max [Max]	Mounting Type	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature
Freescale Semiconductor - NXP BSR14,215	NPN	TO-236AB	Automotive	250 mW	Surface Mount	0.01 µA	300 MHz	100	AEC-Q101	1 V	SC-59 SOT-23-3 TO-236-3	800 mA	40 V	150 °C

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General part information

Bipolar (BJT) Transistor NPN 40 V 800 mA 300MHz 250 mW Surface Mount TO-236AB

Technical documentation and resources