Discrete Semiconductor Products

MBR20080CTR

Active

DIODE MOD SCHOTT 80V 200A 2TOWER

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE MOD SCHOTT 80V 200A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MBR20080CTR

Current - Average Rectified (Io) (per Diode)	200 A
Current - Reverse Leakage @ Vr	5 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Package / Case	Twin Tower
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If [Max]	840 mV

Part	Speed	Supplier Device Package	Package / Case	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]	Mounting Type	Current - Average Rectified (Io) (per Diode)	Technology
GeneSiC Semiconductor MBR20080CT	200 mA 500 ns	Twin Tower	Twin Tower	5 mA	80 V	1 Pair Common Cathode	840 mV	Chassis Mount	200 A	Schottky
GeneSiC Semiconductor MBR20080CTR	200 mA 500 ns	Twin Tower	Twin Tower	5 mA	80 V	1 Pair Common Anode	840 mV	Chassis Mount	200 A	Schottky

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 80 V 200A (DC) Chassis Mount Twin Tower

Technical documentation and resources