Discrete Semiconductor Products

PJC138L_R1_00001

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TRANSISTOR MOSFET N-CH 60V 200MA 3-PIN SOT-323 T/R

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Discrete Semiconductor Products

Active

TRANSISTOR MOSFET N-CH 60V 200MA 3-PIN SOT-323 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PJC138L_R1_00001

Current - Continuous Drain (Id) @ 25°C	200 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	15 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-323, SC-70
Power Dissipation (Max)	350 mW
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs (Max)	Supplier Device Package	Mounting Type	Package / Case	FET Type	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology
Panjit International Inc. PJC138L_R1_00001	20 V	SOT-323	Surface Mount	SC-70 SOT-323	N-Channel	200 mA	0.7 nC	60 V	1.8 V 10 V	350 mW	150 °C	-55 °C	1.5 V	15 pF	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 60 V 200mA (Ta) 350mW (Ta) Surface Mount SOT-323

Technical documentation and resources