Discrete Semiconductor Products

AON6512

NRND

MOSFET N-CH 30V 54A/150A 8DFN

Search across all available documentation for this part.

Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 54A/150A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	AON6512

Current - Continuous Drain (Id) @ 25°C	150 A, 54 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	64 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerSMD, Flat Leads
Power Dissipation (Max)	7.4 W, 83 W
Rds On (Max) @ Id, Vgs	1.7 mOhm
Supplier Device Package	8-DFN (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Vgs(th) (Max) @ Id	FET Type	Current - Continuous Drain (Id) @ 25°C
Alpha & Omega Semiconductor Inc. AON6512	30 V	150 °C	-55 °C	Surface Mount	8-DFN (5x6)	7.4 W 83 W	1.7 mOhm	4.5 V 10 V	20 V	8-PowerSMD Flat Leads	64 nC	3430 pF	MOSFET (Metal Oxide)	2 V	N-Channel	54 A 150 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 54A (Ta), 150A (Tc) 7.4W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6)

Technical documentation and resources