Discrete Semiconductor Products

SIS9634LDN-T1-GE3

Active

MOSFET 2N-CH 60V 6A PPAK 1212

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET 2N-CH 60V 6A PPAK 1212

Technical Specifications

Parameters and characteristics for this part

Specification	SIS9634LDN-T1-GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A, 6 A
Drain to Source Voltage (Vdss)	60 V
Gate Charge (Qg) (Max) @ Vgs [Max]	11 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	420 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8 Dual
Power - Max	17.9 W, 2.5 W
Rds On (Max) @ Id, Vgs	31 mOhm
Supplier Device Package	PowerPAK® 1212-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Technology	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Power - Max	Configuration	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIS9634LDN-T1-GE3	MOSFET (Metal Oxide)	PowerPAK® 1212-8 Dual	Surface Mount	420 pF	31 mOhm	11 nC	-55 °C	150 °C	PowerPAK® 1212-8 Dual	3 V	2.5 W 17.9 W	2 N-Channel (Dual)	6 A 6 A	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 60V 6A (Ta), 6A (Tc) 2.5W (Ta), 17.9W (Tc) Surface Mount PowerPAK® 1212-8 Dual

Technical documentation and resources