Discrete Semiconductor Products

RJK4512DPE-00#J3

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MOSFET N-CH 450V 14A 4LDPAK

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Discrete Semiconductor Products

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MOSFET N-CH 450V 14A 4LDPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK4512DPE-00#J3

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	29 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-83
Power Dissipation (Max)	100 W
Rds On (Max) @ Id, Vgs	510 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Operating Temperature	Rds On (Max) @ Id, Vgs	FET Type	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Renesas Electronics Corporation RJK4512DPE-00#J3	450 V	14 A	Surface Mount	150 °C	510 mOhm	N-Channel	MOSFET (Metal Oxide)	29 nC	30 V	SC-83	10 V	100 W	1100 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 450 V 14A (Ta) 100W (Tc) Surface Mount LDPAK

Technical documentation and resources