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R6014YNX3C16

Discrete Semiconductor Products

RX3P10BBHC16

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Rohm Semiconductor

TRANS MOSFET N-CH SI 100V 170A 3-PIN(3+TAB) TO-220AB T/R

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DocumentsDatasheet Part Explanation +37

R6014YNX3C16

Discrete Semiconductor Products

RX3P10BBHC16

Active

Rohm Semiconductor

TRANS MOSFET N-CH SI 100V 170A 3-PIN(3+TAB) TO-220AB T/R

Deep-Dive with AI

DocumentsDatasheet Part Explanation +37

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RX3P10BBHC16

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Input Capacitance (Ciss) (Max) @ Vds	8600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	189 W
Rds On (Max) @ Id, Vgs	3.3 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	491	$ 7.03
	Tube	1	$ 7.59
		10	$ 6.51
		100	$ 5.42
		500	$ 4.79
		1000	$ 4.31
		2000	$ 4.04
Newark	Each	1	$ 4.40
		10	$ 3.91
		25	$ 3.70
		50	$ 3.54
		100	$ 3.39

Description

General part information

RX3P10BBH Series

RX3P10BBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Documents

Technical documentation and resources

Datasheet

Part Explanation

Application Note

RX3P10BBH ESD Data

Characteristics Data

Basics of Thermal Resistance and Heat Dissipation

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

PCB Layout Thermal Design Guide

About Flammability of Materials

Environmental Data

Two-Resistor Model for Thermal Simulation

Compliance of the RoHS directive

Environmental Data

About Export Regulations

Export Information

Notes for Calculating Power Consumption:Static Operation

Precautions When Measuring the Rear of the Package with a Thermocouple

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Measurement Method and Usage of Thermal Resistance RthJC

Moisture Sensitivity Level - Transistors

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

TO-220AB Inner Structure

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

TO-220AB Explanation for Marking

Package Information

What Is Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

TO-220AB Reliability Test Result

Manufacturing Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

List of Transistor Package Thermal Resistance

What is a Thermal Model? (Transistor)

TO-220AB Packing Information

Package Information

Report of SVHC under REACH Regulation

Environmental Data

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

TO-220AB Dimension

Package Information

Anti-Whisker formation - Transistors

Package Information

How to Use LTspice® Models

Schematic Design & Verification

Notes for Temperature Measurement Using Thermocouples

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Types and Features of Transistors

Application Note

RX3P10BBH Series

Nch 100V 170A, TO-220AB, Power MOSFET

Part	Technology	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)
Rohm Semiconductor RX3P10BBHC16	MOSFET (Metal Oxide)	TO-220-3	100 V	150 °C	8600 pF	135 nC	Through Hole	100 A	189 W	3.3 mOhm	N-Channel	6 V 10 V	TO-220AB	20 V