Discrete Semiconductor Products

RB095T-60

Active

DIODE ARR SCHOTT 60V 3A TO220FN

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE ARR SCHOTT 60V 3A TO220FN

Technical Specifications

Parameters and characteristics for this part

Specification	RB095T-60

Current - Average Rectified (Io) (per Diode)	3 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction	150 °C
Package / Case	TO-220-3 Full Pack
Speed	200 mA, 500 ns
Supplier Device Package	TO-220FN
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	580 mV

150V, 6A, TO-252, Cathode Common, Super Low IRSchottky Barrier Diode

Part	Current - Reverse Leakage @ Vr	Mounting Type	Technology	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Speed	Supplier Device Package	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Qualification
Rohm Semiconductor RB098BGE150TL	7 µA	Surface Mount	Schottky	830 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 ¯C	1 Pair Common Cathode	3 A	200 mA 500 ns	TO-252GE
Rohm Semiconductor RB095T-90NZC9	150 µA	Through Hole	Schottky	750 mV	TO-220-3 Full Pack	150 ¯C	1 Pair Common Cathode	6 A	200 mA 500 ns	TO-220FN
Rohm Semiconductor RB095BM-30FHTL	200 µA	Surface Mount	Schottky	425 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 °C	1 Pair Common Cathode	6 A	200 mA 500 ns	TO-252	Automotive	30 V	AEC-Q101
Rohm Semiconductor RB098BGE-30TL	1.5 µA	Surface Mount	Schottky	720 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 ¯C	1 Pair Common Cathode	3 A	200 mA 500 ns	TO-252GE		30 V
Rohm Semiconductor RB095T-40NZC9	100 çA	Through Hole	Schottky	550 mV	TO-220-3 Full Pack	150 ¯C	1 Pair Common Cathode	6 A	200 mA 500 ns	TO-220FN		40 V
Rohm Semiconductor RB098BGE-60TL	1.5 µA	Surface Mount	Schottky	830 mV	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 ¯C	1 Pair Common Cathode	6 A	200 mA 500 ns	TO-252GE		60 V
Rohm Semiconductor RB095T-60	300 µA	Through Hole	Schottky	580 mV	TO-220-3 Full Pack	150 °C	1 Pair Common Cathode	3 A	200 mA 500 ns	TO-220FN		60 V
Rohm Semiconductor RB095T-60NZC9	300 µA	Through Hole	Schottky	580 mV	TO-220-3 Full Pack	150 ¯C	1 Pair Common Cathode	6 A	200 mA 500 ns	TO-220FN		60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

RB098BGE-30 is the cathode common type schottky barrier diode with super low IRfor switching power supply.

Technical documentation and resources

No documents available