Discrete Semiconductor Products

SISA72DN-T1-GE3

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MOSFET N-CH 40V 60A PPAK1212-8

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Discrete Semiconductor Products

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MOSFET N-CH 40V 60A PPAK1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SISA72DN-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	3240 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs	3.5 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	-16 V, 20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Technology	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SISA72DN-T1-GE3	60 A	-55 °C	150 °C	PowerPAK® 1212-8	MOSFET (Metal Oxide)	3.5 mOhm	N-Channel	52 W	PowerPAK® 1212-8	4.5 V 10 V	2.4 V	-16 V 20 V	40 V	3240 pF	Surface Mount	30 nC

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General part information

N-Channel 40 V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources