Discrete Semiconductor Products

SI7462DP-T1-GE3

Obsolete

MOSFET N-CH 200V 2.6A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 200V 2.6A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7462DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	200 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology
Vishay General Semiconductor - Diodes Division SI7462DP-T1-GE3	30 nC	Surface Mount	PowerPAK® SO-8	PowerPAK® SO-8	200 V	N-Channel	2.6 A	4 V	130 mOhm	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 2.6A (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources