Discrete Semiconductor Products
SCT4018KWATL
ActiveRohm Semiconductor
1200V, 75A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
SCT4018KWATL
ActiveRohm Semiconductor
1200V, 75A, 7-PIN SMD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | SCT4018KWATL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 4532 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-263CA, D2PAK (7 Leads + Tab), TO-263-8 |
| Power Dissipation (Max) | 267 W |
| Rds On (Max) @ Id, Vgs | 23.4 mOhm |
| Vgs (Max) [Max] | 21 V |
| Vgs (Max) [Min] | -4 V |
| Vgs(th) (Max) @ Id | 4.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1000 | $ 26.08 | |
Description
General part information
SCT4018KWA Series
SCT4018KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.
Documents
Technical documentation and resources