Discrete Semiconductor Products

SIA917DJ-T1-GE3

Obsolete

MOSFET 2P-CH 20V 4.5A PPAK8X8

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2P-CH 20V 4.5A PPAK8X8

Technical Specifications

Parameters and characteristics for this part

Specification	SIA917DJ-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6 Dual
Power - Max [Max]	6.5 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	PowerPAK® SC-70-6 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.5 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Vgs(th) (Max) @ Id	Technology	Mounting Type	FET Feature	Package / Case	Supplier Device Package	Drain to Source Voltage (Vdss)	Configuration	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SIA917DJ-T1-GE3	110 mOhm	9 nC	6.5 W	1.5 V	MOSFET (Metal Oxide)	Surface Mount	Logic Level Gate	PowerPAK® SC-70-6 Dual	PowerPAK® SC-70-6 Dual	20 V	2 P-Channel	4.5 A	-55 °C	150 °C	250 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 20V 4.5A 6.5W Surface Mount PowerPAK® SC-70-6 Dual

Technical documentation and resources

No documents available