MCQ4406A-TP

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MOSFET N-CH 30V 12A 8SOP

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Discrete Semiconductor Products

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MOSFET N-CH 30V 12A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	MCQ4406A-TP

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	28 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	2.5 W
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Package / Case	Package / Case [y]	Package / Case [x]	FET Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)
Micro Commercial Components MCQ4406A-TP	12 A	20 V	8-SOIC	3.9 mm	0.154 in	N-Channel	12 mOhm	-55 °C	150 °C	Surface Mount	4.5 V 10 V	MOSFET (Metal Oxide)	2.5 V	2.5 W	8-SOP	28 nC	30 V

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General part information

N-Channel 30 V 12A (Ta) 2.5W Surface Mount 8-SOP

Technical documentation and resources