Discrete Semiconductor Products

FDB8453LZ

Obsolete

MOSFET N-CH 40V 16.1A/50A TO263

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 40V 16.1A/50A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	FDB8453LZ

Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	66 nC
Input Capacitance (Ciss) (Max) @ Vds	3545 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	3.1 W, 66 W
Rds On (Max) @ Id, Vgs	7 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)
ON Semiconductor FDB8453LZ	Surface Mount	3 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)	7 mOhm	N-Channel	20 V	66 nC	3545 pF	-55 °C	150 °C	3.1 W 66 W	4.5 V 10 V	MOSFET (Metal Oxide)	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 40 V 16.1A (Ta), 50A (Tc) 3.1W (Ta), 66W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources