Discrete Semiconductor Products
BUK9M42-60EX
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 100 V, 43 MOHM LOGIC LEVEL MOSFET IN LFPAK33
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Discrete Semiconductor Products
BUK9M42-60EX
ActiveNexperia USA Inc.
MOSFETS N-CHANNEL 100 V, 43 MOHM LOGIC LEVEL MOSFET IN LFPAK33
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK9M42-60EX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 867 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 44 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 37 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10 V |
| Vgs(th) (Max) @ Id | 2.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BUK9M42-60E Series
Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Documents
Technical documentation and resources