Discrete Semiconductor Products

PSMN8R9-100BSEJ

Active

MOSFET N-CH 100V 108A D2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 100V 108A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN8R9-100BSEJ

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	160 nC
Input Capacitance (Ciss) (Max) @ Vds	9488 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	296 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Mounting Type	Package / Case	Technology
Freescale Semiconductor - NXP PSMN8R9-100BSEJ	10 mOhm	D2PAK	296 W	160 nC	20 V	100 V	9488 pF	75 A	10 V	-55 °C	175 ░C	N-Channel	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A (Tc) 296W (Tc) Surface Mount D2PAK

Technical documentation and resources