Discrete Semiconductor Products

RJK0301DPB-02#J0

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MOSFET N-CH 30V 60A 5LFPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 60A 5LFPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0301DPB-02#J0

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	32 nC
Input Capacitance (Ciss) (Max) @ Vds	5000 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	65 W
Rds On (Max) @ Id, Vgs	2.8 mOhm
Supplier Device Package	LFPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V

Part	Power Dissipation (Max)	FET Type	Mounting Type	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max) [Max]	Supplier Device Package	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs
Renesas Electronics Corporation RJK0301DPB-02#J0	65 W	N-Channel	Surface Mount	150 °C	60 A	SC-100 SOT-669	5000 pF	-12 V 16 V	LFPAK	MOSFET (Metal Oxide)	30 V	4.5 V 10 V	32 nC	2.8 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 60A (Ta) 65W (Tc) Surface Mount LFPAK

Technical documentation and resources