Discrete Semiconductor Products

GPP60B-001HE3/54

Obsolete

DIODE GEN PURP 100V 6A P600

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Discrete Semiconductor Products

Obsolete

DIODE GEN PURP 100V 6A P600

Technical Specifications

Parameters and characteristics for this part

Specification	GPP60B-001HE3/54

Capacitance @ Vr, F	110 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage @ Vr	5 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	P600, Axial
Qualification	AEC-Q101
Reverse Recovery Time (trr)	5.5 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	P600
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V

Part	Technology	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Qualification	Grade	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type	Speed	Speed	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division GPP60B-001HE3/54	Standard	5 µA	110 pF	5.5 µs	175 ░C	-55 C	P600	AEC-Q101	Automotive	100 V	P600 Axial	Through Hole	Standard Recovery >500ns	200 mA	6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 100 V 6A Through Hole P600

Technical documentation and resources

No documents available