Specification	BUK98180-100A/CUX

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	619 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power Dissipation (Max)	8 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	173 mOhm
Supplier Device Package	SOT-223
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	2 V

BUK98180-100A Series

N-channel TrenchMOS logic level FET

Part	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Supplier Device Package	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Qualification	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Grade	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
Nexperia USA Inc. BUK98180-100A/CUX	N-Channel	150 °C	-55 °C	8 W	SOT-223	MOSFET (Metal Oxide)	4.5 V 10 V	100 V	Surface Mount	619 pF	AEC-Q101	TO-261-4 TO-261AA	4.6 A	10 V	Automotive	173 mOhm	2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.12

Description

General part information

BUK98180-100A Series

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.