Discrete Semiconductor Products

SI7495DP-T1-E3

Obsolete

MOSFET P-CH 12V 13A PPAK SO-8

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 12V 13A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7495DP-T1-E3

Current - Continuous Drain (Id) @ 25°C	13 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	140 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	1.8 W
Rds On (Max) @ Id, Vgs	6.5 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	900 mV

Part	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package
Vishay General Semiconductor - Diodes Division SI7495DP-T1-E3	8 V	MOSFET (Metal Oxide)	140 nC	13 A	12 V	-55 °C	150 °C	P-Channel	PowerPAK® SO-8	900 mV	1.8 V 4.5 V	Surface Mount	1.8 W	6.5 mOhm	PowerPAK® SO-8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 12 V 13A (Ta) 1.8W (Ta) Surface Mount PowerPAK® SO-8

Technical documentation and resources

No documents available