Discrete Semiconductor Products

APTM10DHM09T3G

Obsolete

MOSFET 2N-CH 100V 139A SP3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 100V 139A SP3

Technical Specifications

Parameters and characteristics for this part

Specification	APTM10DHM09T3G

Configuration	2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C	139 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Qg) (Max) @ Vgs [Max]	350 nC
Input Capacitance (Ciss) (Max) @ Vds	9875 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP3
Power - Max [Max]	390 W
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	SP3
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Mounting Type	Supplier Device Package	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Configuration	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs
Microsemi Corporation APTM10DHM09T3G	4 V	9875 pF	MOSFET (Metal Oxide)	Chassis Mount	SP3	390 W	-40 °C	150 °C	2 N-Channel (Dual) Asymmetrical	SP3	100 V	10 mOhm	139 A	350 nC
Microsemi Corporation APTM10TDUM19PG		5100 pF	MOSFET (Metal Oxide)	Chassis Mount	SP6-P	208 W	-40 °C	150 °C	6 N-Channel (3-Phase Bridge)	SP6	100 V	21 mOhm	70 A		200 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 55.75

General part information

Mosfet Array 100V 139A 390W Chassis Mount SP3

Technical documentation and resources

No documents available