Discrete Semiconductor Products

PCDH4065CCG1_T0_00601

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DIODE ARR SIC 650V 20A TO-247AD

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Discrete Semiconductor Products

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DIODE ARR SIC 650V 20A TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	PCDH4065CCG1_T0_00601

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	120 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247AD
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Supplier Device Package	Mounting Type	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Diode Configuration
Panjit International Inc. PCDH4065CCG1_T0_00601	TO-247AD	Through Hole	SiC (Silicon Carbide) Schottky	TO-247-3	175 ░C	-55 C	20 A	No Recovery Time	650 V	0 ns	120 µA	1.7 V	1 Pair Common Cathode

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General part information

Diode Array 1 Pair Common Cathode 650 V 20A (DC) Through Hole TO-247-3

Technical documentation and resources

No documents available