Discrete Semiconductor Products

NSVB144EPDXV6T1G

Obsolete

TRANS PREBIAS NPN/PNP SOT563

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

TRANS PREBIAS NPN/PNP SOT563

Technical Specifications

Parameters and characteristics for this part

Specification	NSVB144EPDXV6T1G

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Grade	Automotive
Mounting Type	Surface Mount
Package / Case	SOT-666, SOT-563
Power - Max [Max]	500 mW
Qualification	AEC-Q101
Resistor - Base (R1)	47 kOhms
Resistor - Emitter Base (R2)	47000 Ohms
Supplier Device Package	SOT-563
Transistor Type	1 NPN, 1 PNP
Vce Saturation (Max) @ Ib, Ic	250 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Grade	Qualification	Package / Case	Mounting Type	Supplier Device Package	Resistor - Emitter Base (R2)	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Resistor - Base (R1)	Vce Saturation (Max) @ Ib, Ic
ON Semiconductor NSVB144EPDXV6T1G	80	50 V	1 NPN 1 PNP	Automotive	AEC-Q101	SOT-563 SOT-666	Surface Mount	SOT-563	47000 Ohms	500 mW	100 mA	500 nA	47 kOhms	250 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 500mW Surface Mount SOT-563

Technical documentation and resources