Discrete Semiconductor Products

VS-70HFL10S02

Active

DIODE GEN PURP 100V 70A DO203AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 70A DO203AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-70HFL10S02

Current - Average Rectified (Io)	70 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Stud, DO-5, DO-203AB
Reverse Recovery Time (trr)	200 ns
Speed	500 ns, 200 mA
Supplier Device Package	DO-203AB
Supplier Device Package	DO-5
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.85 V

Part	Package / Case	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Technology	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-70HFL10S02	DO-203AB DO-5 Stud	200 mA 500 ns	100 V	DO-203AB	DO-5	70 A	Chassis Stud Mount	1.85 V	200 ns	Standard	-40 °C	125 °C	100 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 70A Chassis, Stud Mount DO-203AB (DO-5)

Technical documentation and resources