Discrete Semiconductor Products

VS-ETU0805FP-M3

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DIODE GP 500V 8A TO220-2FP

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Discrete Semiconductor Products

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DIODE GP 500V 8A TO220-2FP

Technical Specifications

Parameters and characteristics for this part

Specification	VS-ETU0805FP-M3

Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	9 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	TO-220-2 Full Pack
Reverse Recovery Time (trr)	50 ns
Speed	500 ns, 200 mA
Supplier Device Package	TO-220-2 Full Pack
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	500 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If	Technology	Mounting Type	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Vishay General Semiconductor - Diodes Division VS-ETU0805FP-M3	1.25 V	Standard	Through Hole	50 ns	9 µA	200 mA 500 ns	TO-220-2 Full Pack	500 V	8 A	TO-220-2 Full Pack	175 ░C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 500 V 8A Through Hole TO-220-2 Full Pack

Technical documentation and resources