Discrete Semiconductor Products

RRQ020P03TCR

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MOSFET P-CH 30V 2A TSMT6

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Discrete Semiconductor Products

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MOSFET P-CH 30V 2A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RRQ020P03TCR

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	230 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power Dissipation (Max)	1.25 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id [Max]	Mounting Type	Technology	Power Dissipation (Max)	Vgs (Max)	Operating Temperature	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	FET Type	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RRQ020P03TCR	30 V	2.5 V	Surface Mount	MOSFET (Metal Oxide)	1.25 W	20 V	150 °C	TSMT6 (SC-95)	230 pF	SOT-23-6 Thin TSOT-23-6	4 V	10 V	2 A	P-Channel	160 mOhm	3.2 nC

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