Discrete Semiconductor Products

PMV40UN,215

Obsolete

MOSFET N-CH 30V 4.9A TO236AB

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 4.9A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV40UN,215

Current - Continuous Drain (Id) (Tc)	4.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	9.3 nC
Input Capacitance (Ciss) (Max)	445 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	SOT-23 (TO-236AB)
Power Dissipation (Max)	1.9 W
Rds On (Max)	47 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	700 mV

Part	Current - Continuous Drain (Id) (Tc)	Package Name	FET Type	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max)	Vgs (Max)	Power Dissipation (Max)	Mounting Type	Rds On (Max)	Gate Charge (Max)	Package / Case	Technology
NXP USA Inc. PMV45EN,215	5.4 A	SOT-23 (TO-236AB)	N-Channel	-55 °C	150 °C	10 V	4.5 V	2 V	30 V	350 pF	20 V	280 mW	Surface Mount	42 mOhm	9.4 nC	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)
NXP USA Inc. PMV40UN,215	4.9 A	SOT-23 (TO-236AB)	N-Channel	-55 °C	150 °C	4.5 V	1.8 V	700 mV	30 V	445 pF	8 V	1.9 W	Surface Mount	47 mOhm	9.3 nC	SC-59 SOT-23-3 TO-236-3	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 4.9A (Tc) 1.9W (Tc) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources