Discrete Semiconductor Products

PMV40UN,215

Obsolete

MOSFET N-CH 30V 4.9A TO236AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 4.9A TO236AB

Technical Specifications

Parameters and characteristics for this part

Specification	PMV40UN,215

Current - Continuous Drain (Id) @ 25°C	4.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Input Capacitance (Ciss) (Max) @ Vds	445 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.9 W
Rds On (Max) @ Id, Vgs	47 mOhm
Supplier Device Package	SOT-23 (TO-236AB)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	700 mV

Part	FET Type	Mounting Type	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs
Freescale Semiconductor - NXP PMV45EN,215	N-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	280 mW	4.5 V 10 V	30 V	-55 °C	150 °C	5.4 A	9.4 nC	SOT-23 (TO-236AB)	2 V	350 pF	42 mOhm	20 V	MOSFET (Metal Oxide)
Freescale Semiconductor - NXP PMV40UN,215	N-Channel	Surface Mount	SC-59 SOT-23-3 TO-236-3	1.9 W	1.8 V 4.5 V	30 V	-55 °C	150 °C	4.9 A		SOT-23 (TO-236AB)	700 mV	445 pF	47 mOhm	8 V	MOSFET (Metal Oxide)	9.3 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 4.9A (Tc) 1.9W (Tc) Surface Mount SOT-23 (TO-236AB)

Technical documentation and resources