Discrete Semiconductor Products

BIDW50N65T

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IGBT TRENCH FS 650V 100A TO247

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Discrete Semiconductor Products

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IGBT TRENCH FS 650V 100A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	BIDW50N65T

Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Pulsed (Icm)	150 A
Gate Charge	123 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	416 W
Reverse Recovery Time (trr)	37.5 ns
Supplier Device Package	TO-247
Switching Energy	3 mJ, 1.1 mJ
Td (on/off) @ 25°C [Max]	125 ns
Td (on/off) @ 25°C [Min]	37 ns
Test Condition	10 Ohm, 50 A, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2.2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	Test Condition	Package / Case	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Switching Energy	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Current - Collector (Ic) (Max) [Max]	Gate Charge	Power - Max [Max]	Supplier Device Package	Mounting Type
Bourns Inc. BIDW50N65T	10 Ohm 15 V 50 A 400 V	TO-247-3	37.5 ns	150 A	2.2 V	650 V	1.1 mJ 3 mJ	125 ns	37 ns	150 °C	-55 °C	Trench Field Stop	100 A	123 nC	416 W	TO-247	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 100 A 416 W Through Hole TO-247

Technical documentation and resources