Discrete Semiconductor Products

BUK7510-100B,127

Obsolete

MOSFET N-CH 100V 75A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 75A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	BUK7510-100B,127

Current - Continuous Drain (Id) @ 25°C	75 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	80 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	6773 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	300 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Nexperia USA Inc. BUK7510-100B,127	10 mOhm	80 nC	AEC-Q101	TO-220AB	TO-220-3	75 A	MOSFET (Metal Oxide)	6773 pF	N-Channel	Automotive	10 V	20 V	175 °C	-55 °C	Through Hole	300 W	100 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 100 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

Technical documentation and resources