Discrete Semiconductor Products

RJK0390DPA-00#J5A

Obsolete

MOSFET N-CH 30V 65A 8WPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 65A 8WPAK

Technical Specifications

Parameters and characteristics for this part

Specification	RJK0390DPA-00#J5A

Current - Continuous Drain (Id) @ 25°C	65 A
Drain to Source Voltage (Vdss)	30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8900 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	8-WPAK
Technology	MOSFET (Metal Oxide)

N Channel Power MOSFET

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Operating Temperature
Renesas Electronics Corporation RJK0390DPA-00#J53	30 V	2.2 mOhm	8-WPAK	N-Channel	65 A	Surface Mount	8-PowerWDFN	MOSFET (Metal Oxide)	8900 pF	54 nC	60 W
Renesas Electronics Corporation RJK0390DPA-00#J5A	30 V	2.2 mOhm	8-WPAK	N-Channel	65 A	Surface Mount	8-WFDFN Exposed Pad	MOSFET (Metal Oxide)	8900 pF	54 nC	60 W	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	6000	$ 1.68

General part information

The RJK0390DPA is a N Channel Power MOSFET.

Technical documentation and resources