Discrete Semiconductor Products
RB088NS150TL
ActiveRohm Semiconductor
SUPER LOW IR, 150V, 10A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
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Discrete Semiconductor Products
RB088NS150TL
ActiveRohm Semiconductor
SUPER LOW IR, 150V, 10A, TO-263S (D2PAK), SCHOTTKY BARRIER DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | RB088NS150TL |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 15 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | LPDS |
| Technology | Schottky |
| Voltage - Forward (Vf) (Max) @ If | 880 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RB088NS150 Series
ROHM's schottky barrier diodes are low VF, low IR and high ESD resistant, suitable for phone and various portable electronics.
Documents
Technical documentation and resources