Discrete Semiconductor Products

6A02-G

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DIODE 200V 6A 2-PIN CASE R-6 AMMO

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Discrete Semiconductor Products

Active

DIODE 200V 6A 2-PIN CASE R-6 AMMO

Technical Specifications

Parameters and characteristics for this part

Specification	6A02-G

Capacitance	100 pF
Current - Average Rectified (Io)	6 A
Current - Reverse Leakage	10 µA
Mounting Type	Through Hole
Operating Temperature - Junction (Max)	125 °C
Operating Temperature - Junction (Min)	-55 °C
Package / Case	R-6, Axial
Package Name	R-6
Speed	Standard Recovery
Speed - Fast Recovery (Minimum)	200 mA, 500 ns
Speed - Recovery Current	200 mA, 200 mA
Speed - Recovery Time	500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max)	200 V
Voltage - Forward (Vf) (Max)	1 V

Part	Voltage - Forward (Vf) (Max)	Package Name	Mounting Type	Package / Case	Technology	Operating Temperature - Junction (Max)	Operating Temperature - Junction (Min)	Current - Reverse Leakage	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Capacitance	Speed - Fast Recovery (Minimum)	Speed	Speed - Recovery Current	Speed - Recovery Time
Comchip Technology 6A02-G	1 V	R-6	Through Hole	Axial R-6	Standard	125 °C	-55 °C	10 µA	200 V	6 A	100 pF	200 mA 500 ns	Standard Recovery	200 mA 200 mA	500 ns

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3D models and CAD resources for this part

General part information

Diode 200 V 6A Through Hole R-6

Technical documentation and resources

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