Discrete Semiconductor Products

SI7868ADP-T1-E3

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MOSFET N-CH 20V 40A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 20V 40A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7868ADP-T1-E3

Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	6110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	83 W, 5.4 W
Rds On (Max) @ Id, Vgs	2.25 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1.6 V

Part	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Technology	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Vishay General Semiconductor - Diodes Division SI7868ADP-T1-GE3	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	150 nC	20 V	1.6 V	16 V	Surface Mount	PowerPAK® SO-8	2.25 mOhm	5.4 W 83 W	PowerPAK® SO-8	-55 °C	150 °C	6110 pF
Vishay General Semiconductor - Diodes Division SI7868ADP-T1-E3	N-Channel	4.5 V 10 V	MOSFET (Metal Oxide)	150 nC	20 V	1.6 V	16 V	Surface Mount	PowerPAK® SO-8	2.25 mOhm	5.4 W 83 W	PowerPAK® SO-8	-55 °C	150 °C	6110 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 40A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources