Discrete Semiconductor Products

VS-40EPF10PBF

Obsolete

DIODE GP 1KV 40A TO247AC

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Discrete Semiconductor Products

Obsolete

DIODE GP 1KV 40A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-40EPF10PBF

Current - Average Rectified (Io)	40 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	450 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AC Modified
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.4 V

Part	Reverse Recovery Time (trr)	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Current - Reverse Leakage @ Vr	Technology
Vishay General Semiconductor - Diodes Division VS-40EPF10PBF	450 ns	1000 V	1.4 V	Through Hole	TO-247AC Modified	40 A	200 mA 500 ns	150 °C	-40 °C	TO-247-2	100 µA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 40A Through Hole TO-247AC Modified

Technical documentation and resources

No documents available