Discrete Semiconductor Products
UT6MA3TCR
ActiveRohm Semiconductor
MOSFET, N AND P-CH, 20V, 5.5A, DFN2020
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
UT6MA3TCR
ActiveRohm Semiconductor
MOSFET, N AND P-CH, 20V, 5.5A, DFN2020
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | UT6MA3TCR |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5 A, 5.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-PowerUDFN |
| Power - Max [Max] | 2 W |
| Rds On (Max) @ Id, Vgs | 59 mOhm |
| Supplier Device Package | HUML2020L8 |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
UT6MA3 Series
UT6MA3 is Low on-resistance Middle Power MOSFET for switching application.
Documents
Technical documentation and resources